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PD - 9.1501A
IRFIZ24N
HEXFET(R) Power MOSFET
Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description
l l
D
VDSS = 55V
G S
RDS(on) = 0.07 ID = 14A
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing.
TO-220 FULLPAK
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw
Max.
14 10 68 29 0.19 20 71 10 2.9 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m)
Units
A W W/C V mJ A mJ V/ns C
Thermal Resistance
Parameter
RJC RJA Junction-to-Case Junction-to-Ambient
Typ.
--- ---
Max.
5.2 65
Units
C/W 8/25/97
IRFIZ24N
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on) VGS(th) gfs IDSS I GSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss C
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Drain to Sink Capacitance
Min. 55 --- --- 2.0 4.5 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Typ. --- 0.052 --- --- --- --- --- --- --- --- --- --- 4.9 34 19 27 4.5 7.5 370 140 65 12
Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.07 VGS = 10V, ID = 7.8A 4.0 V VDS = VGS , ID = 250A --- S VDS = 25V, I D = 10A 25 VDS = 55V, VGS = 0V A 250 VDS = 44V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 20 ID = 10A 5.3 nC VDS = 44V 7.6 VGS = 10V, See Fig. 6 and 13 --- VDD = 28V --- ID = 10A ns --- RG = 24 --- RD = 2.6, See Fig. 10 Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact --- VGS = 0V --- VDS = 25V pF --- = 1.0MHz, See Fig. 5 --- = 1.0MHz
D
S
Source-Drain Ratings and Characteristics
IS
ISM
VSD trr Qrr ton Notes:
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol 14 --- --- showing the A G integral reverse --- --- 68 p-n junction diode. S --- --- 1.3 V TJ = 25C, IS = 7.8A, VGS = 0V --- 56 83 ns TJ = 25C, IF = 10A --- 120 180 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Pulse width 300s; duty cycle 2%. t=60s, =60Hz
Uses IRFZ24N data and test conditions
VDD = 25V, starting TJ = 25C, L = 1.0mH
RG = 25, IAS = 10A. (See Figure 12)
ISD 10A, di/dt 280A/s, VDD V(BR)DSS,
TJ 175C
IRFIZ24N
100
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTT OM 4.5V TOP
100
I , D ra in -to -S o u rc e C u rre n t (A ) D
10
I , D ra in -to -S o u rc e C u rre n t (A ) D
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTT OM 4.5V TOP
10
4 .5V
4 .5V 2 0 s PU LSE W ID TH TTJ= 2 5C C
0.1 1 10
1
A
1 0.1 1
20 s P UL SE W IDTH TTJ = 17 5C C
10 100
A
100
V D S , D rain-to-S ource V oltage (V )
V D S , Drain-to-Source V oltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
3.0
R D S (o n ) , D ra in -to -S o u rc e O n R e si sta n ce (N o rm a li ze d )
I D = 1 7A
I D , D r ain- to-S ourc e C urre nt (A )
2.5
TJ = 2 5 C T J = 1 7 5 C
2.0
10
1.5
1.0
0.5
1 4 5 6 7
V DS = 2 5 V 2 0 s P U L SE W ID TH
8 9 10
A
0.0 -60 -40 -20 0 20 40 60 80
V G S = 10 V
100 120 140 160 180
A
V G S , Ga te-to-S o urce V oltage (V )
T J , Junction T em perature (C )
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
IRFIZ24N
700
600
C , C a p a c ita n c e (p F )
500
C iss C os s
400
300
V G S , G a te -to -S o u rc e V o lta g e (V )
V GS C is s C rs s C os s
= = = =
0V , f = 1MH z C gs + C g d , Cds SH OR TED Cgd C ds + C gd
20
I D = 1 0A V DS = 4 4V V DS = 2 8V
16
12
8
200
C rss
4
100
0 1 10 100
A
0 0 4 8
FO R TES T C IR CU IT SEE FIG U R E 13
12 16 20
A
V D S , Drain-to-Source V oltage (V)
Q G , Total Gate Charge (nC )
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
1000
I S D , R e v e rse D ra in C u rre n t (A )
OPE R ATIO N IN TH IS A RE A LIMITE D BY R D S(o n)
TJ = 175 C TJ = 25C
10
I D , D ra in C u rre n t (A )
100 10s
10
100 s
1 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VG S = 0 V
1.8
A
1 1
T C = 25 C T J = 17 5C S ing le Pulse
10
1m s 10m s 100
A
2.0
V S D , Source-to-D rain V oltage (V )
V D S , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
IRFIZ24N
15
VDS VGS
RD
D.U.T.
+
ID , Drain Current (A)
RG
10
- VDD
10V
Pulse Width 1 s Duty Factor 0.1 %
5
Fig 10a. Switching Time Test Circuit
VDS 90%
0 25 50 75 100 125 150 175
TC , Case Temperature
( C)
10% VGS
td(on) tr t d(off) tf
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10b. Switching Time Waveforms
10
(Z thJC )
D = 0.50 0.20 0.10 0.05 0.02 0.01 0.1 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t1 / t 2 2. Peak T J = P DM x Z thJC + T C
1
Thermal Response
0.01 0.00001
0.0001
0.001
0.01
0.1
1
t1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRFIZ24N
VDS D.U.T. RG + V - DD
5.0 V
E A S , S in g le P u ls e A va la n c h e E n e rg y (m J)
L
140
TO P
120
BOT TO M
100
ID 4.2A 7 .2A 10A
IAS tp
0.01
80
60
Fig 12a. Unclamped Inductive Test Circuit
40
20
V(BR)DSS tp VDD VDS
0
V D D = 2 5V
25 50 75 100 125 150
A
175
Starting TJ , Junction T emperature (C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
10 V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
IRFIZ24N
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS
IRFIZ24N
Package Outline
TO-220 Fullpak Outline Dimensions are shown in millimeters (inches)
10.60 (.41 7) 10.40 (.40 9) o 3.40 (.133 ) 3.10 (.123 ) -A 3.70 (.145) 3.20 (.126) 4.8 0 (.189) 4.6 0 (.181) 2 .80 (.110) 2 .60 (.102) LE AD A S SIGN M E N T S 1 - GA TE 2 - D R AIN 3 - SO U R C E
7 .10 (.280) 6 .70 (.263)
16 .0 0 (.630) 15 .8 0 (.622)
1.15 (.04 5) M IN . 1 2 3
N O T ES : 1 D IM EN SION IN G & T O LER A N C IN G PE R AN S I Y14.5 M , 1982 2 C O N TR OLLIN G D IM EN S ION : IN C H .
3.30 (.130 ) 3.10 (.122 ) -B13 .7 0 (.540) 13 .5 0 (.530) C D
A 3X 1.40 (.05 5) 1.05 (.04 2) 0.9 0 (.035) 3X 0.7 0 (.028) 0.25 (.010 ) M AM B 3X 0.48 (.019) 0.44 (.017)
B
2 .54 (.100) 2X
2.85 (.112 ) 2.65 (.104 )
M IN IM U M C R E EP AG E D IST A NC E B ET W E EN A-B -C -D = 4.80 (.189 )
Part Marking Information
TO-220 Fullpak
E XAM PLE : T HIS IS A N IRF I840G W ITH AS SE MBLY LOT CODE E401
A
INT ER NAT IONA L RE CTIF IER LOGO
PA RT NU MBE R IRF I840G
E 401 9 24 5
AS SE MBLY LOT COD E
D ATE CODE (YYW W ) YY = YE AR W W = W E EK
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 8/97

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